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                     BYV25F-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 — 7 March 2011 5 of 11 NXP Semiconductors BYV25F-600 Enhanced ultrafast power diode 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics VF forward voltage IF =5A; Tj = 25 °C; see Figure 5 -1.31.9V IF =5A; Tj = 150 °C; see Figure 5 -1.11.7V IR reverse current VR =600V; Tj = 100 °C - - 1.5 mA VR =600V; Tj =25°C --50μA Dynamic characteristics Qr recovered charge IF =1A; VR =30V; dIF/dt = 100 A/μs; Tj =25°C; see Figure 6 -13-nC trr reverse recovery time IF =1A; VR =30V; dIF/dt = 100 A/μs; Tj =25°C; see Figure 6 - 17.5 35 ns IRM peak reverse recovery IF =1A; VR =30V; dIF/dt = 100 A/μs; current Tj =25°C; see Figure 6 -1.5-A VFRM forward recovery voltage IF =1A; dIF/dt = 100 A/μs; Tj =25°C; see Figure 7 -3.2-V Vo = 1.499 V; R s = 0.041 ? (1) Tj = 150 °C; typical values; (2) Tj = 150 °C; maximum values; (3) Tj = 25 °C; maximum values; Fig 5. Forward current as a function of forward voltage Fig 6. Reverse recovery definitions; ramp recovery 003aaf445 VF (A) 031 2 8 12 4 16 20 IF (A) 0 (1) (2) (3) 003aac562 trr time 100 % 25 % IF dlF dt IR IRM Qr |